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dmc40 50ssd document number: ds33310 rev. 3 - 2 1 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd 40v complementary pair enhancement mode mosfet product summary device v (br)dss r ds( on ) max i d max t a = + 25 c (notes 6 & 8 ) q1 40v 45m ? @ v gs = 10v 5. 5a 60m ? @ v gs = 4.5v 4.2 a q2 - 40v 45m ? @ v gs = - 10v - 5. 8a 60m ? @ v gs = - 4.5 v - 4.2 a description this mosfet is designed to ensure that r ds (on) of n and p channel fet are matched to minimize losses in both arms of the bridge. the dmc4040ssd is optimized for use in 3 - phase brushless dc motor circuits ( bldc), and ccfl backlighting. applications ? 3 - p hase bldc m otor ? ccfl b acklighting features and benefits ? matched n & p r ds( on ) C minimizes power losses ? fast switching C minimizes switching losses ? dual d evice C reduces pcb a rea ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: so - 8 ? case material: molded plastic, gree n molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper l ead frame. solderable per mil - std - 202, method 208 ? weight: 0.074 grams ( a ppro ximate) ordering information (note 4 ) product marking reel s ize (inches) tape w idth (mm) quantity per r eel dmc4050ssd - 13 c4050sd 13 12 2,500 note s : 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65 /eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporate ds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as tho se which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packages.html . so - 8 top view top view equivalent circuit d 1 s 1 g 1 s 2 g 2 d 1 d 2 d 2 d 1 s 1 g 1 d 2 s 2 g 2
dmc40 50ssd document number: ds33310 rev. 3 - 2 2 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd marking information maximum ratings ( @t a = +25c, unless otherwise specified.) characteristic symbol n - channel - q1 p - channel - q2 units drain - source voltage v dss 40 - 40 v gate - source voltage v gss ? ? g s = 10v (notes 6 & 8 ) i d 5. 8 - 5. 8 a t a = + 70c (notes 6 & 8 ) 4.38 - 4.52 (notes 5 & 8 ) 4.2 - 4. 2 (notes 5 & 9 ) 5 .3 - 5. 3 pulsed drain current v gs = 10v (notes 7 & 8 ) i dm 24.1 - 24.9 continuous source current (bod y d iode) (notes 6 & 8 ) i s 2.5 - 2.5 pulsed source current (body d iode) (notes 7 & 8 ) i sm 24.1 - 24.9 thermal characteristics characteristic symbol n - channel - q1 p - channel - q2 unit power dissipat ion linear derating factor (notes 5 & 8 ) p d 1.25 10 w mw/ c (notes 5 & 9 ) 1.8 14.3 (notes 6 & 8 ) 2.14 17.2 thermal resistance, junction to ambient (notes 5 & 8 ) r ja 100 c/w (notes 5 & 9 ) 70 (notes 6 & 8 ) 58 thermal resistance, junction to lead (notes 5 & 10 ) r jl 51 operating and storage temperature range t j, t stg - 55 to +150 c notes: 5 . for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady - state condition. 6 . same as note ( 5 ), except the device is measured at t ? 10 sec. 7 . same as note (5 ), except the device is pulsed with d = 0.02 and pulse width 300 s. 8. for a dual device with one active die. 9. for a device with two active die running at equal power. 10 . thermal resistance from junction to solder - point (at the end of the drain lead) . = manufacturers marking c4050sd yy ww
dmc40 50ssd document number: ds33310 rev. 3 - 2 3 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd thermal characteristics (continued) 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 0.1 1 10 10m 100m 1 10 r(theta junction-to-ambient), r ? ja one active die 100us 100ms 1s r ds(on) limited 1ms n-channel safe operating area single pulse t amb = 25c one active die dc 10ms i d drain current (a) v ds drain-source voltage (v) one active die two active die derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb = 25c one active die pulse power dissipation maximum power (w) pulse width (s) single pulse t amb = 25c one active die 1s dc 100us 1ms 10ms 100ms r ds(on) limited p-channel safe operating area -v ds drain-source voltage (v) -i d drain current (a)
dmc40 50ssd document number: ds33310 rev. 3 - 2 4 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd electrical characteristics (q1 n - channel) ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 11 ) drain - source breakdown voltage bv dss 40 v v gs = 0v, i d = 250a zero gate voltage drain current t j = + 25 c i dss 1.0 a v ds = 40 v, v gs = 0v gate - source leakage i gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 11 ) gate threshold voltage v gs(th) 0.8 1.3 1.8 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) 20 33 45 6 0 m ? v gs = 10 v, i d = 3a v gs = 4.5 v, i d = 3a forward transfer admittance |y fs | 12.6 s v ds = 5 v, i d = 3a diode forward voltage (note 11 ) v sd 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 12 ) input capacitance c iss 1790.8 pf v ds = 20 v, v gs = 0v , f = 1.0mhz output capacitance c oss 160.6 pf reverse transfer capacitance c rss 120.5 pf gate resistance r g 1.03 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g 37.56 nc v gs = 10 v, v ds = 20 v, i d = 3 a gate - source charge q gs 7.8 nc gate - drain charge q gd 6.6 nc turn - on delay time t d(on) 8.08 ns v gs = 10 v , v ds = 20 v , i d = 3 a t urn - on rise time t r 15.14 ns turn - off delay time t d(off) 24.29 ns turn - off fall time t f 5.27 ns electrical characteristics (q2 p - channel) ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 11 ) drain - source breakdown voltage bv dss - 40 v v gs = 0v, i d = - 250a zero gate voltage drain current t j = + 25c i dss - 1.0 a v ds = - 40 v, v gs = 0v gate - source leakage i gss 100 n a v gs = 20 v, v ds = 0v on characteristics (note 11 ) gate threshold voltage v gs(th) - 0.8 - 1.3 - 1.8 v v ds = v gs , i d = - 250 a static drain - sourc e on - resistance r ds (on) 28 30 45 6 0 m ? v gs = - 10 v, i d = - 3a v gs = - 4.5 v, i d = - 3a forward transfer admittance |y fs | 16.6 s v ds = - 5 v, i d = - 3a diode forward voltage (note 11 ) v sd - 0.7 - 1.0 v v gs = 0v, i s = - 1a dynamic characteristics (no te 12 ) input capacitance c iss 1643.17 pf v ds = - 20 v, v gs = 0v , f = 1.0mhz output capacitance c oss 179.13 pf reverse transfer capacitance c rss 127.82 pf gate resistance r g 6.43 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g 33. 66 nc v gs = - 10 v, v ds = - 20 v, i d = - 3 a gate - source charge q gs 5.54 nc gate - drain charge q gd 7.30 nc turn - on delay time t d(on) 6.85 ns v gs = - 10 v , v ds = - 20 v , i d = - 3 a turn - on rise time t r 14.72 ns turn - off delay time t d(off) 53. 65 ns turn - off fall time t f 30.86 ns notes: 11 . short duration pulse test used to minimize self - heating effect. 12 . guaranteed by design. not subject to production testing.
dmc40 50ssd document number: ds33310 rev. 3 - 2 5 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd typical characteristics (q1 n - channel) 0 5 10 15 20 25 30 0 0.5 1 1.5 2 fig. 1 typical output characteristic v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 3.5v gs v = 2.5v gs v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 8.0v gs 0 5 10 15 20 25 30 0 1 2 3 4 5 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 10v gs 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = 10v i = 20a gs d v = 4.5v i = 10a gs d 0 0.01 0.02 0.03 0.04 0.05 0.06 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? v = 10v i = 20a gs d v = 4.5v i = 10a gs d
dmc40 50ssd document number: ds33310 rev. 3 - 2 6 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i , s o u r c e c u r r e n t ( a ) s t = 25c a 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c rss c oss f = 1mhz 0 5 10 15 20 25 30 35 40 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds 1 10 100 10,000 i , l e a k a g e c u r r e n t ( n a ) d s s 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 11 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 v , g a t e - s o u r c e v o l t a g e ( v ) g s v = 20v i = 12a ds d
dmc40 50ssd document number: ds33310 rev. 3 - 2 7 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 94c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmc40 50ssd document number: ds33310 rev. 3 - 2 8 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd typical characteristics (q2 p - channel) 0 0.5 1 1.5 2 fig. 13 typical output characteristic -v , drain-source voltage (v) ds 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d 0 1 2 3 4 5 fig. 14 typical transfer characteristic -v , gate-source voltage (v) gs 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 5 10 15 20 25 30 fig. 15 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d 0 0.01 0.02 0.03 0.04 0.05 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v gs v = -10v gs 0 5 10 15 20 25 30 -i , drain current (a) d fig. 16 typical on-resistance vs. drain current and temperature 0 0.01 0.02 0.03 0.04 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -10v gs fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = -10v i = -20a gs d v = -4.5v i = -10a gs d fig. 18 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.01 0.02 0.03 0.04 0.05 0.06 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? v = -10v i = -20a gs d v = -4.5v i = -10a gs d
dmc40 50ssd document number: ds33310 rev. 3 - 2 9 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd 0 0.5 1.0 1.5 2.0 fig. 19 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -250a d i = -1ma d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 20 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 12 14 16 18 20 - i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 5 10 15 20 25 30 fig. 21 typical total capacitance -v , drain-source voltage (v) ds 10 100 1,000 10,000 c , c a p a c i t a n c e ( p f ) c iss c rss c oss 0 5 10 15 20 25 30 35 40 fig. 22 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 10,000 - i , l e a k a g e c u r r e n t ( n a ) d s s 1,000 t = 25c a t = 85c a t = 125c a t = 150c a 0 5 10 15 20 25 30 35 40 fig. 23 gate-charge characteristics q , total gate charge (nc) g 0 2 4 6 8 10 - v , g a t e - s o u r c e v o l t a g e ( v ) g s v = -20v i = -12a ds d
dmc40 50ssd document number: ds33310 rev. 3 - 2 10 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd 0.001 0.01 0.1 1 10 100 1,000 fig. 24 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 94c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmc40 50ssd document number: ds33310 rev. 3 - 2 11 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad la yout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. so - 8 dim min max a - 1.75 a1 0.10 0.20 a2 1.30 1.50 a3 0.15 0.25 b 0.3 0.5 d 4.85 4.95 e 5.90 6.10 e1 3.85 3.95 e 1.27 typ h - 0.35 l 0.62 0.82 ? ? all dimensions in mm dimensions value (in mm) x 0.60 y 1.55 c1 5.4 c2 1.27 so - 8 so - 8 gauge plane seating plane detail a detail a e e1 h l d e b a2 a1 a 45 7 ~ 9 a3 0 . 2 5 4 x c1 c2 y
dmc40 50ssd document number: ds33310 rev. 3 - 2 12 of 12 www.diodes.com september 2015 ? diodes incorporated dmc4050ssd important no tice diodes incorporated makes no warranty of any kind, exp ress or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidi aries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the applicati on or use of this document or any product described herein; neither does diodes incorporated convey any license under its pat ent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appl ications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporat ed and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described here in may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english b ut may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for u se as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended t o implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a c ritical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have a ll necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and a ny use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify di odes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com

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